NPN Silicon Darlington Transistors (For general AF applications High collector current)

NPN Silicon Darlington Transistors ● For general AF applications ● High collector current ● High current gain ● Complementary types: BCV 26, BCV 46 (PNP)

文件：140.64 Kbytes 页数：4 Pages

SIEMENS

西门子

丝印：FG；Package：SOT-23；NPN Darlington Amplifier Transistor

FEATURES ● Complementary to BCV26,BCV46. ● High collector current. ● High current gain. ● For general AF applications. ● Complementary types:BCV26,BCV46 APPLICATIONS ● NPN silicon darlington transistor.

文件：770.09 Kbytes 页数：4 Pages

LUGUANG

鲁光电子

丝印：FG；Package：SOT-23；SOT-23 Plastic-Encapsulate Transistors

FEATURES High Collector Current High Current Gain

文件：2.8621 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

NPN Darlington Transistors

NPN Darlington Transistors for preamplifier input applications

文件：857.9 Kbytes 页数：2 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：FG；Package：SOT23；NPN Darlington transistor

1. General description NPN Darlington transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: BCV26 2. Features and benefits • Medium current of 500 mA • Low voltage of 60 V • High DC current gain of minimum 2000 3. Applications • Preamplif

文件：212.34 Kbytes 页数：8 Pages

NEXPERIA

安世

Surface mount Si-Epitaxial PlanarTransistors

• Power dissipation 250 mW • Plastic case SOT-23 (TO-236) • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

文件：172.65 Kbytes 页数：2 Pages

DIOTEC

德欧泰克

丝印：FH；Package：SOT-23；NPN Darlington Transistors

NPN Darlington Transistors Features ● High Collector Current. ● High Current Gain.

文件：584.11 Kbytes 页数：3 Pages

PJSEMI

平晶半导体

NPN Surface Mount Darlington Transistor

文件：381.19 Kbytes 页数：4 Pages

MCC

High collector current High current gain Complementary

文件：118.96 Kbytes 页数：2 Pages

RECTRON

丽正

SURFACE MOUNT SILICON NPN DARLINGTON TRANSISTOR

文件：558.33 Kbytes 页数：4 Pages

CENTRAL