2:1 MIPI D-PHY,C-PHY(2.5Gbps) 4-Data Lane Switch

The BCT644 is a four-data-lane, MIPI, D-PHY, C-PHY switch. This single-pole, double-throw (SPDT) switch is optimized for switching between two high-speed or low-power MIPI sources. The BCT644 is designed for the MIPI specification and allows connection to a CSI or DSI module. • Switch Type: SPDT(10x)\n• Signal Types: MIPI, D-PHY,C-PHY\n• VCC:1.65 to 4.5V\n• Input Signals: 0 to VCC\n• RON: 7.7Ω Typical HS MIPI          8.8Ω Typical LP MIPI\n• ΔRON: 0.6Ω Typical\n• RON_FLAT: 0.3Ω Typical\n• ICCZ: 0.5uA Maximum\n• ICC: 26uA Typical\n• QIRR:-32dB Typical\n• XTALK:-45dB Typic;

Broadchip

广芯电子

2:1 MIPI D-PHY,C-PHY(2.0Gbps) 4-Data Lane Switch

The BCT644B is a four-data-lane, MIPI, D-PHY, C-PHY switch. This single-pole, double-throw (SPDT) switch is optimized for switching between two high-speed or low-power MIPI sources. The BCT644B is designed for the MIPI specification and allows connection to a CSI or DSI module. • Switch Type: SPDT(10x)\n• Signal Types: MIPI, D-PHY,C-PHY\n• VCC:1.65 to 4.5V\n• Input Signals: 0 to VCC\n• RON: 7.7Ω Typical HS MIPI          8.8Ω Typical LP MIPI\n• ΔRON: 0.6Ω Typical\n• RON_FLAT: 0.3Ω Typical\n• ICCZ: 0.5uA Maximum\n• ICC: 26uA Typical\n• QIRR:-32dB Typical\n• XTALK:-45dB Typic;

Broadchip

广芯电子

2:1 MIPI D-PHY,C-PHY(2.5Gbps) 4-Data Lane Switch

The BCT644C is a four-data-lane, MIPI, D-PHY, C-PHY switch. This single-pole, double-throw (SPDT) switch is optimized for switching between two high-speed or low-power MIPI sources. The BCT644C is designed for the MIPI specification and allows connection to a CSI or DSI module. • Switch Type: SPDT(10x)\n• Signal Types: MIPI, D-PHY,C-PHY\n• VCC:1.65 to 4.5V\n• Input Signals: 0 to VCC\n• RON: 6.0Ω Typical HS MIPI          7.0Ω Typical LP MIPI\n• ΔRON: 0.6Ω Typical\n• RON_FLAT: 0.3Ω Typical\n• ICCZ: 0.5uA Maximum\n• ICC: 26uA Typical\n• QIRR:-32dB Typical\n• XTALK:-35dB Typic;

Broadchip

广芯电子

NPN SILICON DARLINGTON TRANSISTORS

NPN SILICON DARLINGTON TRANSISTORS

文件：125.89 Kbytes 页数：4 Pages

SIEMENS

西门子

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min) • High DC Current Gain : hFE= 750(Min) @IC= -3A • Low Saturation Voltage • Complement to Type BD643 APPLICATIONS • Designed for use as complementary AF push-pull output stage applications

文件：108.11 Kbytes 页数：2 Pages

ISC

无锡固电

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. NPN complements are BD643, BD645, BD647

文件：369.32 Kbytes 页数：5 Pages

COMSET