丝印：P5616T；Package：SC-73；80 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • Qualified according to AEC-Q101 and recommended for use in automotive applications

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NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

80 V, 1 A NPN medium power transistors

NPN medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.\nTable 1. Product Overview Type number\n Package\n PNP complement\n Nexperia\n JEITA\n JEDEC\n BCP56T\n SOT223\n SC-73\n -\n BCP53T\n BCP56-10T\n BCP53-1 • High collector current capability IC and ICM\n• Three current gain selections\n• High power dissipation capability\n• AEC-Q101 qualified;

Nexperia

安世

80 V, 1 A NPN medium power transistors

NPN medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.\nTable 1. Product overview Type number\n Package\n NPN comlement\n Nexperia\n JEDEC\n  BCP56T-Q\n SOT223\n SC-73\n BCP53T-Q\n BCP56-10T-Q\n BCP53-10T-Q\n • High collector current capability IC and ICM\n• Three current gain selections\n• High power dissipation capability\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世

Package：TO-261-4，TO-261AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 80V 1A SOT223

ONSEMI

安森美半导体

Package：TO-261-4，TO-261AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 80V 1A SOT223

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Package：TO-261-4，TO-261AA；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 80V 1A SOT223

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司