SCALABLE 12-PORT GIGABIT ETHERNET MULTILAYER SWITCH

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A Scalable Approach to Gigabit Ethernet Switch Design

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SCALABLE 12-PORT GIGABIT ETHERNET MULTILAYER SWITCH

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60V N-Channel PowerTrenchTM MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(o

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FAIRCHILD

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=32A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) =27mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：328.71 Kbytes 页数：2 Pages

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无锡固电

60V N-Channel PowerTrench??MOSFET

60V N-Channel PowerTrench® MOSFET

文件：206.65 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体