SCALABLE 12-PORT GIGABIT ETHERNET MULTILAYER SWITCH

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A Scalable Approach to Gigabit Ethernet Switch Design

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SCALABLE 12-PORT GIGABIT ETHERNET MULTILAYER SWITCH

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60V N-Channel PowerTrenchTM MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(o

文件：391.07 Kbytes 页数：16 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=32A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) =27mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

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ISC

无锡固电

60V N-Channel PowerTrench??MOSFET

60V N-Channel PowerTrench® MOSFET

文件：206.65 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司