BD238G

PlasticMediumPowerBipolarTransistors

PlasticMediumPowerBipolarTransistors Designedforusein5.0to10Waudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. Features •DCCurrentGain−hFE=40(Min)@IC=0.15Adc •EpoxyMeetsUL94V0@0.125in •ESDRatings:HumanBodyModel,3B;>

BD238PNP

EPITAXIALSILICONPOWERTRANSISTORS

EPITAXIALSILICONPOWERTRANSISTORS IntendedforuseinMediumPowerLinearSwitchingApplications

BD238S

MediumPowerLinearandSwitchingApplications

BD238-TU

TO-126Plastic-EncapsulateTransistors

FEATURES ComplementtoBD233/BD235/BD237respectively

BF238

TO-92PlasticPackageTransistors(NPN)

C238S

ContactForm:C238S:1a/C338S:2aLoadVoltage:600VMaximum

CH238UPT

SWITCHINGDIODEVOLTAGE80VoltsCURRENT0.2Ampere

VOLTAGE80VoltsCURRENT0.2Ampere FEATURE *Smallsurfacemountingtype.(SC-70/SOT-323) *Twodiodeelementsareconnectedinseries(VFX2)percircuit. *Maximumtotalpowerdisspationis200mW. *Peakforwardcurrentis600mA. APPLICATION *Protectioncircuits. *Biascircuit.

CM238

T-31/4MiniatureBayonetBase

T-31/4MiniatureBayonetBase

CM238

MiniatureBayonetBase

D238ERW

LowCost,Miniature2WSIP,WideInputDC/DCConverters

KeyFeatures: •2WOutputPower •2:1InputVoltageRange •1,500VDCIsolation •ShortCircuitProtected •MiniatureSIPCase •Single&DualOutputs •1.0MHMTBF •IndustryStandardPin-Out •LowLowCost!!