Single-Ended Cordsets

Basic features Application Operating voltage Approval/Conformity CE cULus EAC WEEE

文件：108.34 Kbytes 页数：2 Pages

BALLUFF

巴鲁夫

L & S BAND GaAs FET [ SMD non - matched ]

DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=31dBm(TYP.) @f=1.9GHz,Pin=18dBm High power gain Gp=13dB(TYP.) @f=1.9GHz High power added efficiency nadd=48(TYP.

文件：44.08 Kbytes 页数：4 Pages

MITSUBISHI

三菱电机

900 MHz GSM CELLULAR INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT

The MRFIC Line 900 MHz GaAs Integrated Power Amplifier This integrated circuit is intended for GSM class IV handsets. The device is specified for 2.8 watts output power and 48 minimum power added efficiency under GSM signal conditions at 4.8 Volt supply voltage. To achieve this superior perform

文件：140.57 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

1 Watt SMD Miniature Isolated Single Output

文件：89.09 Kbytes 页数：2 Pages

RECOM