Single-Ended Cordsets

Basic features Approval/Conformity CE cULus EAC WEEE

文件：105.77 Kbytes 页数：2 Pages

Balluff

巴鲁夫

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：623.18 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel MOSFET uses advanced trench technology

文件：1.54046 Mbytes 页数：5 Pages

DOINGTER

杜因特

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 900V, 2A, RDS(ON) = 6.8W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

文件：641.87 Kbytes 页数：4 Pages

CET-MOS

华瑞