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CHT858BWPT

PNPGeneralPurposeTransistor

VOLTAGE30VoltsCURRENT0.1Ampere FEATURE *Surfacemountpackage.(SC-70/SOT-323) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. APPLICATION *AFinputstagesanddriverapplicationonequipment. *Oth

CHENMKOCHENMKO ENTERPRISE CO., LTD.

力勤力勤股份有限公司

CSB858

PNP/NPNPLASTICPOWERTRANSISTORS

CDIL

Continental Device India Limited

CSB858B

PNP/NPNPLASTICPOWERTRANSISTORS

CDIL

Continental Device India Limited

CSB858C

PNP/NPNPLASTICPOWERTRANSISTORS

CDIL

Continental Device India Limited

CSB858D

PNP/NPNPLASTICPOWERTRANSISTORS

CDIL

Continental Device India Limited

FDR858P

SingleP-Channel,LogicLevel,PowerTrenchTMMOSFET

GeneralDescription TheSuperSOT-8familyofP-ChannelLogicLevelMOSFETshavebeendesignedtoprovidealowprofile,smallfootprintalternativetoindustrystandardSO-8littlefoottypeproduct. ThisP-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenc

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

GBC858

PNPEPITAXIALPLANARTRANSISTOR

GTMGTM CORPORATION

勤益投资控股勤益投资控股股份有限公司

GBC858

TheGBC858isdesignedforswitchingandAFamplifierapplication,suitableforautomaticinsertioninthickandthin-filmcircuits

ETLE-Tech Electronics LTD

亚历电子亚历电子有限公司

GI858

FASTSWITCHINGPLASTICRECTIFIER

FEATURES ♦PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ♦Highsurgecurrentcapability ♦Fastswitchingforhighefficiency ♦Constructionutilizesvoid-freemoldedplastictechnique ♦Highforwardcurrentoperation ♦Hightemperaturesolderingguaranteed:2

GE

GE Industrial Company

GI858

FastSwitchingPlasticRectifier

FEATURES •Fastswitchingforhighefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgecapability •Solderdip275°Cmax.10s,perJESD22-B106 •ComplianttoRoHSdirective2002/95/ECandin   accordancetoWEEE2002/96/EC TYPICALAPPLICATIONS   Forusei

VishayVishay Siliconix

威世科技威世科技半导体

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