BC857BV数据手册Nexperia中文资料规格书

描述 Description

PNP double transistor in a SOT666 plastic package. NPN complement: BC847BV.

特性 Features

• 300 mW total power dissipation
• Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin package
• Excellent coplanarity due to straight leads
• Improved thermal behaviour due to flat leads
• Reduces number of components as replacement of two SC-75/SC-89 packaged BISS transistors
• Reduces required board space
• Reduces pick and place costs.
• AEC-Q101 qualified

应用 Application

• General purpose switching and amplification.