BC857BV

PNP/PNPmatcheddoubletransistors

Features *Currentgainmatching *Base-emittervoltagematching *Drop-inreplacementforstandarddoubletransistors

BC857BV-TP

PNPPlastic-EncapsulateTransistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •EpitaxialDieConstruction •ComplementaryNPNType

BC857BW

PNPSiliconAFTransistors(ForAFinputstagesanddriverapplicationsHighcurrentgainLowcollector-emittersaturationvoltage)

Features ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC847W,BC848W,BC849W,BC850W(NPN)

BC857BW

PNPSURFACEMOUNTSMALLSIGNALTRANSISTOR

Features •IdeallySuitedforAutomaticInsertion •ComplementaryNPNTypesAvailable(BC846AW–BC848CW) •ForswitchingandAFAmplifierApplications •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.GreenDevice(Note3) •QualifiedtoAEC-Q101

BC857BW

PNPSiliconAFTransistors

•ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes:BC846W,BC847W,BC848W,BC849W,BC850W(NPN)

BC857BW

SurfacemountSi-EpitaxialPlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation200mW •PlasticcaseSOT-323 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

BC857BW

GeneralPurposeTransistorPNPSilicon

GeneralPurposeTransistor PNPSilicon PbLead(Pb)-Free

BC857BW

PNPSURFACEMOUNTSMALLSIGNALTRANSISTOR

BC857BW

PNPGeneralPurposeTransistor

■Features ●Ideallysuitedforautomaticinsertion ●ForSwitchingandAFAmplifierApplications

BC857BW

PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •IdeallySuitedforAutomatedInsertion •ComplementaryNPNTypesAvailable(BC846W-BC848W) •ForSwitchingandAFAmplifierApplications •LeadFree/RoHSCompliant(Note3) •GreenDevice(Note4and5)