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BC857BDW1

双 PNP 双极晶体管

The Dual PNP Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT-363/SC-88, which is designed for low power surface mount applications. • Device Marking:BC856BDW1T1 = 3BBC857BDW1T1 = 3FBC857CDW1T1 = 3GBC858BDW1T1 = 3KBC858CDW1T1 = 3L\n• S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable ;

ONSEMI

安森美半导体

BC857BDW1T1

Dual General Purpose Transistors(PNP Duals)

Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.

文件:164.15 Kbytes 页数:5 Pages

LRC

乐山无线电

BC857BDW1T1

Dual General Purpose Transistors

Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.

文件:469.23 Kbytes 页数:5 Pages

ETL

亚历电子

BC857BDW1T1

Dual General Purpose Transistors

Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. • Device Marking: BC856BDW1T1 = 3B BC857BDW1T1 = 3F BC857CDW1T1 = 3G

文件:106.29 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

BC857BDW1T1G

Dual General Purpose Transistors

Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compli

文件:178.77 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

BC857BDW1T1G-TP

Dual PNP Small Signal Surface Mount Transistor

Features Epitaxial planar die construction © Utra-small surface mount package

文件:1.29464 Mbytes 页数:4 Pages

TECHPUBLIC

台舟电子

BC857BDW1T1G

Dual General Purpose Transistors

文件:123.82 Kbytes 页数:7 Pages

ONSEMI

安森美半导体

BC857BDW1T1G

Dual General Purpose Transistors

文件:88.63 Kbytes 页数:7 Pages

ONSEMI

安森美半导体

BC857BDW1T1

Transistors

Willas

威伦电子

BC857BDW1T1G

三极管 / 通用三极管

First

福斯特

技术参数

  • Pb-free:

    Pb

  • AEC Qualified:

    A

  • Halide free:

    H

  • PPAP Capablee:

    P

  • Status:

    Active

  • Polarity:

    Dual PNP

  • Type:

    General Purpose

  • VCE(sat) Max (V):

    0.3

  • IC Cont. (A):

    0.1

  • VCEO Min (V):

    45

  • VCBO (V):

    50

  • VEBO (V):

    5

  • VBE(sat) (V):

    0.7

  • VBE(on) (V):

    0.6

  • hFE Min:

    220

  • hFE Max:

    475

  • fT Min (MHz):

    100

  • PTM Max (W):

    0.38

  • Package Type:

    SC-88-6/SC-70-6/SOT-363-6

供应商型号品牌批号封装库存备注价格
ON
24+/25+
13756
原装正品现货库存价优
询价
LRC
24+
SC-88
450000
询价
ON
25+
SOT-363
2600
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
ON
24+
SOT-363
2500
原装现货热卖
询价
ON
24+
N/A
13523
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
ON
16+
原厂封装
10000
全新原装正品,代理优势渠道供应,欢迎来电咨询
询价
ONSEMICONDUCTOR
23+
NA
31954
专做原装正品,假一罚百!
询价
ON
25+23+
NA
25246
绝对原装正品全新进口深圳现货
询价
三年内
1983
只做原装正品
询价
ON
24+
SC70-6
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
询价
更多BC857BDW1供应商 更新时间2026-1-20 14:30:00