BC856G

Silicon PNP transistor in a SOT-23 Plastic Package

BC856G-X-AE3-R

SWITCHING AND AMPLIFIER APPLICATIONS

BC856G-X-AE3-R

SWITCHING AND AMPLIFIER APPLICATION

BC856G-X-AL3-R

SWITCHING AND AMPLIFIER APPLICATIONS

BC856G-X-AL3-R

SWITCHING AND AMPLIFIER APPLICATION

BC856-HF

GeneralPurposeTransistor

GeneralPurposeTransistor RoHSDevice HalogenFree Features ​​​​​​​-Ideallysuitedforautomaticinsertion -Powerdissipation PCM:0.25W(@TA=25°C) -Lowcurrent.(max.100mA) -Collector-basevoltage VCBO:BC856=-80V BC857=-50V BC858=-30V

BC856-Q

65V,100mANPNgeneral-purposetransistors

Featuresandbenefits •General-purposetransistors •SMDplasticpackages •Twodifferentgainselections •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications

BC856S

PNPSiliconAFTransistorArray

PNPSiliconAFTransistorArrays •ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Two(galvanic)internalisolatedtransistorwithgoodmatchinginonepackage •BC856S/U,BC857S:Fororientationinreelseepackageinformation

BC856S

SurfacemountSi-EpitaxialPlanarTransistors

SurfaceMountGeneralPurposeSi-Epi-PlanarDouble-Transistors •Powerdissipation300mW •PlasticcaseSOT-363 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

BC856S

PNPSiliconAFTransistorArray(ForAFinputstagesanddriverapplicationsHighcurrentgainLowcollector-emittersaturationvoltage)

•ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Two(galvanic)internalisolatedTransistorswithhighmatchinginonepackage