PNP Dual General Purpose Transistors

PNP Dual General Purpose Transistors Pb Lead(Pb)-Free

文件：1.0279 Mbytes 页数：6 Pages

WEITRON

丝印：5Ft；Package：SOT-363；SOT-363 Plastic-Encapsulate Transistors

FEATURES e Two transistors in one package e Reduces number of components and board space e No mutual interference between the transistors

文件：971.64 Kbytes 页数：4 Pages

DGNJDZ

南晶电子

Dual General Purpose Transistors

文件：940.15 Kbytes 页数：6 Pages

YEASHIN

亚昕科技

Dual General Purpose Transistors

Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.

文件：469.23 Kbytes 页数：5 Pages

ETL

亚历电子

Dual General Purpose Transistors

Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compli

文件：178.77 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Dual General Purpose Transistors(PNP Duals)

Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.

文件：164.15 Kbytes 页数：5 Pages

LRC

乐山无线电

Dual General Purpose Transistors

Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. • Device Marking: BC856BDW1T1 = 3B BC857BDW1T1 = 3F BC857CDW1T1 = 3G

文件：106.29 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Dual General Purpose Transistors

Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. • Device Marking: BC856BDW1T1 = 3B BC857BDW1T1 = 3F BC857CDW1T1 = 3G

文件：106.29 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Dual General Purpose Transistors

Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compli

文件：178.77 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Dual General Purpose Transistors

Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compli

文件：178.77 Kbytes 页数：6 Pages

ONSEMI

安森美半导体