0.2 Watts PNP Plastic-Encapsulate Transistors

Features ◇ Epitaxial planar die construction ◇ Surface device type mounting ◇ Moisture sensitivity level 1 ◇ Matte Tin(Sn) lead finish with Nickel(Ni) underplate ◇ Pb free version and RoHS compliant ◇ Green compound (Halogen free) with suffix G on packing code and prefix G on date code

文件：88.23 Kbytes 页数：3 Pages

TSC

台湾半导体

General Purpose Transistor PNP Silicon

General Purpose Transistor PNP Silicon P/b Lead(Pb)-Free

文件：95.23 Kbytes 页数：4 Pages

WEITRON

PNP Dual General Purpose Transistors

PNP Dual General Purpose Transistors Pb Lead(Pb)-Free

文件：1.0279 Mbytes 页数：6 Pages

WEITRON

PNP general purpose transistors

General description PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits • Low current (max. 100 mA) • Low voltage (max. 65 V) • AEC-Q101 qualified Applications • General-purpose switching and amplification

文件：164.69 Kbytes 页数：10 Pages

恩XP

NPN general purpose Transistor

FEATURES ● Low current.(max.100mA). ● Low voltage.. APPLICATIONS ● General purpose switching and amplification.

文件：202.38 Kbytes 页数：4 Pages

BILIN

银河微电

TRANSISTOR (PNP)

FEATURES • Ideally suited for automatic insertion • For Switching and AF Amplifier Applications

文件：1.33965 Mbytes 页数：5 Pages

HTSEMI

金誉半导体

PNP General Purpose Transistor

Features ● Ideally suited for automatic insertion ● For Switching and AF Amplifier Applications

文件：41.79 Kbytes 页数：2 Pages

KEXIN

科信电子

丝印：3B；Package：SOT-23；PNP general purpose Transistor

FEATURES ● Low current.(max.100mA) ● Low voltage.(max.65v) APPLICATIONS ● General purpose switching and amplification.

文件：476.22 Kbytes 页数：4 Pages

LEIDITECH

雷卯电子

丝印：3B；Package：SOT-23；Low current.(max.100mA)

FEATURES ● Low current.(max.100mA) ● Low voltage.(max.65v) APPLICATIONS ● General purpose switching and amplification.

文件：679.55 Kbytes 页数：4 Pages

LEIDITECH

雷卯电子

PNP GENERAL PURPOSE TRANSISTORS

VOLTAGE 65/45/30 Volts POWER 225 mW FEATURES • General Purpose Amplifier Applications • NPN Epitaxial Silicon, Planar Design • Collector Current IC = -100mA • Complimentary (PNP) Devices : BC846/BC847/BC848/BC849 Series • In compliance with EU RoHS 2002/95/EC directives

文件：97.57 Kbytes 页数：4 Pages

PANJIT

強茂