BC850C

NPN General Purpose Transistors

■Features ●Lowcurrent(max.100mA) ●Lowvoltage(max.45V). ●PNPcomplements:BC859andBC860.

BC850-C-AE3-R

SWITCHING AND AMPLIFIER APPLICATION

■FEATURES *Suitableforautomaticinsertioninthickandthin-filmcircuits. *ComplementtoBC856…BC860

BC850-C-AL3-R

SWITCHING AND AMPLIFIER APPLICATION

■FEATURES *Suitableforautomaticinsertioninthickandthin-filmcircuits. *ComplementtoBC856…BC860

BC850CLT1

General Purpose Transistors(NPN Silicon)

GeneralPurposeTransistors NPNSilicon

BC850CLT1

CASE 318-08, STYLE 6 SOT-23 (TO-236AB)

GeneralPurposeTransistors NPNSilicon

BC850CLT1

General Purpose Transistors(NPN Silicon)

GeneralPurposeTransistors NPNSilicon Features •Pb−FreePackagesareAvailable •MoistureSensitivityLevel:1 •ESDRating −HumanBodyModel:>4000V −MachineModel:>400V

BC850CLT1G

General Purpose Transistors(NPN Silicon)

GeneralPurposeTransistors NPNSilicon Features •Pb−FreePackagesareAvailable •MoistureSensitivityLevel:1 •ESDRating −HumanBodyModel:>4000V −MachineModel:>400V

BC850CLT1G

General Purpose Transistors

GeneralPurposeTransistors NPNSilicon Features •MoistureSensitivityLevel:1 •ESDRating−HumanBodyModel:>4000V ESDRating−MachineModel:>400V •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 Q

BC850CLT1G

General Purpose Transistors

GeneralPurposeTransistors NPNSilicon Features •MoistureSensitivityLevel:1 •ESDRating−HumanBodyModel:>4000V ESDRating−MachineModel:>400V •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 Q

BC850CMTF

Marking：8EC；Package：SOT-23；NPN Epitaxial Silicon Transistor

Features •SwitchingandAmplifierApplications •Suitableforautomaticinsertioninthickandthin-filmcircuits •LowNoise:BC849,BC850 •ComplementtoBC856...BC860