BC848BPDW

GENERAL PURPOSE TRANSISTOR NPN/PNP DUAL (COMPLIMENTARY)

DESCRIPTION Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSC–88whichisdesignedforlowpowersurfacemountapplications.WedeclarethatthematerialofproductcompliancewithRoHSrequirements.TheBC846BPDW~BC848CPDWisavailableinSC–88

BC848BPDW1T1

Dual General Purpose Transistors(NPN/PNP Duals)

Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−363/SC−88whichisdesignedforlowpowersurfacemountapplications. Features •Pb−FreePackageisAvailable

BC848BQ

NPNGeneralPurposeAmplifier

BC848BRF

250mW,NPNSmallSignalTransistor

BC848BRFG

250mW,NPNSmallSignalTransistor

BC848BS

NPNPlasticEncapsulateTransistor

FEATURES •Ideallysuitedforautomaticinsertion •ForSwitchingandAFAmplifierApplications

BC848BT

NPNSiliconAFTransistors

NPNSiliconAFTransistors ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes: BC856T,BC857T, BC858T,BC859T,BC860T

BC848BW

GeneralPurposeTransistorNPNSilicon

GeneralPurposeTransistor NPNSilicon PbLead(Pb)-Free

BC848BW

SurfacemountSi-EpitaxialPlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation200mW •PlasticcaseSOT-323 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

BC848BW

NPNSiliconAFTransistors

NPNSiliconAFTransistors ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC856W,BC857W,BC858W,BC859W,BC860W(PNP)