BC848B

NPNSiliconAFTransistors

•ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes: BC856...-BC860...(PNP) •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101

BC848B

NPNSmallSignalTransistor310mW

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •PowerDissipation:0.225W(Tamb=25°C)(Note1) •CollectorCurrent:0.1A •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1

BC848B

GeneralPurposeTransistors

GeneralPurposeTransistors NPNSilicon

BC848B

0.2WattsNPNPlastic-EncapsulateTransistors

Features ♦Epitaxialplanardieconstruction ♦Surfacedevicetypemounting ♦Moisturesensitivitylevel1 ♦MatteTin(Sn)leadfinishwithNickel(Ni)underplate ♦PbfreeversionandRoHScompliant ♦Greencompound(Halogenfree)withsuffixGonpackingcodeandprefixGondat

BC848B

NPNGENERALPURPOSETRANSISTORS

FEATURES •Generalpurposeamplifierapplications •NPNepitaxialsilicon,planardesign •CollectorcurrentIC=100mA •Pbfreeproductareavailable:99SnabovecanmeetRohsenvironmentsubstancedirectiverequest

BC848B

SMDGeneralPurposeTransistor(NPN)

Features •NPNSiliconEpitaxialPlanarTransistorforSwitchingandAmplifierApplications

BC848B

NPNgeneralpurposeTransistor

FEATURES •Highcurrentgain. •ExcellenthFElinearity. •Lownoisebetween30Hzand15kHz. •ForAFinputstagesanddriverapplications. APPLICATIONS •Generalpurposeswitchingandamplification.

BC848B

NPNGeneralPurposeTransistor

■Features ●Ideallysuitedforautomaticinsertion ●ForswitchingandAFamplifierapplications

BC848B

BC846A

FEATURES •Collectcurrent:0.1A •GeneralPurposeTransistorNPNType •RoHScompliantproduct •OperatingTemp.:-55OC~+150OC

BC848B

30V,100mANPNgeneral-purposetransistors

Generaldescription NPNgeneral-purposetransistorsinSurfaceMountedDevice(SMD)plasticpackages. Features ■General-purposetransistors ■SMDplasticpackages Applications ■General-purposeswitchingandamplification