BC847CT

NPNTransistors

BC847CT

NPNPlasticEncapsulateTransistor

BC847CT

NPNgeneralpurposeTransistor

BC847CT

45V,100mANPNgeneral-purposetransistors

BC847CT-TP

NPNSurfaceMountSmallSignalTransistor150mW

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpitaxialDieConstruction •ComplementaryPNPTypeAvailable(BC857AT,BT,CT) •Ultra-SmallSurfaceMountPackage •Epoxy

BC847CW

NPNSiliconAFTransistors

NPNSiliconAFTransistors ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC856W,BC857W,BC858W,BC859W,BC860W(PNP)

BC847CW

SurfacemountSi-EpitaxialPlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation200mW •PlasticcaseSOT-323 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

BC847CW

NPNSiliconAFTransistor(ForAFinputstagesanddriverapplicationsHighcurrentgainLowcollector-emittersaturationvoltage)

BC847CW

NPNSURFACEMOUNTSMALLSIGNALTRANSISTOR

Features •IdeallySuitedforAutomaticInsertion •ComplementaryPNPTypes:BC856W–BC858W •ForSwitchingandAFAmplifierApplications •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.GreenDevice(Note3) •QualifiedtoAEC-Q101Standardsfor

BC847CW

NPNgeneralpurposetransistors

DESCRIPTION NPNtransistorinaSC70;SOT323plasticpackage. PNPcomplements:BC856WandBC857W. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitchingandamplification.