首页 >BC847C-TP-HF>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NPNSurfaceMountSmallSignalTransistor150mW Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpitaxialDieConstruction •ComplementaryPNPTypeAvailable(BC857AT,BT,CT) •Ultra-SmallSurfaceMountPackage •Epoxy | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | MCC | ||
SurfacemountSi-EpitaxialPlanarTransistors SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation200mW •PlasticcaseSOT-323 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDiotec Semiconductor 德欧泰克 | Diotec | ||
NPNSiliconAFTransistors NPNSiliconAFTransistors ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC856W,BC857W,BC858W,BC859W,BC860W(PNP) | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
NPNSiliconAFTransistor(ForAFinputstagesanddriverapplicationsHighcurrentgainLowcollector-emittersaturationvoltage) | SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司 | SIEMENS | ||
NPNSURFACEMOUNTSMALLSIGNALTRANSISTOR Features •IdeallySuitedforAutomaticInsertion •ComplementaryPNPTypes:BC856W–BC858W •ForSwitchingandAFAmplifierApplications •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.GreenDevice(Note3) •QualifiedtoAEC-Q101Standardsfor | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
NPNgeneralpurposetransistors DESCRIPTION NPNtransistorinaSC70;SOT323plasticpackage. PNPcomplements:BC856WandBC857W. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitchingandamplification. | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
GeneralPurposeTransistorNPNSilicon GeneralPurposeTransistor NPNSilicon PbLead(Pb)-Free | WEITRON Weitron Technology | WEITRON | ||
45V,100mANPNgeneral-purposetransistors DESCRIPTION NPNtransistorinaSOT23plasticpackage.PNPcomplements:BC856,BC857andBC858. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitchingandamplification. | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPNGENERALPURPOSETRANSISTORS FEATURES •Generalpurposeamplifierapplications •NPNepitaxialsilicon,planardesign •CollectorcurrentIC=100mA •BothnormalandPbfreeproductareavailable: Normal:80~95Sn,5~20Pb Pbfree:98.5Snabove | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
NPNGeneralPurposeTransistor ■Features ●Lowcurrent(max.100mA). ●Lowvoltage(max.65V). | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN |
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