NPN Small Signal Transistor 310mW

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Power Dissipation: 0.225W (Tamb=25°C)(Note 1) • Collector Current: 0.1A • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1

文件：105.72 Kbytes 页数：2 Pages

MCC

0.2 Watts NPN Plastic-Encapsulate Transistors

Features ♦ Epitaxial planar die construction ♦ Surface device type mounting ♦ Moisture sensitivity level 1 ♦ Matte Tin(Sn) lead finish with Nickel(Ni) underplate ♦ Pb free version and RoHS compliant ♦ Green compound (Halogen free) with suffix G on packing code and prefix G on dat

文件：126.96 Kbytes 页数：3 Pages

TSC

台湾半导体

General Purpose Transistor NPN Silicon

General Purpose Transistor NPN Silicon * Moisture Sensitivity Level: 1 * ESD Rating - Human Body Model:>4000V - Machine Model:>400V

文件：277.22 Kbytes 页数：5 Pages

WEITRON

丝印：1E*；Package：SOT-23；45 V, 100 mA NPN general-purpose transistors

General description NPN general-purpose transistors in small plastic packages. Features ■ Low current ■ Low voltage ■ Three different gain selections Applications ■ General-purpose switching and amplification

文件：96.95 Kbytes 页数：15 Pages

恩XP

NPN general purpose Transistor

FEATURES • High current gain. • Excellent hFE linearity . • Low noise between 30Hz and 15kHz. • For AF input stages and driver applications. APPLICATIONS • General purpose switching and amplification.

文件：202.39 Kbytes 页数：4 Pages

BILIN

银河微电

General Purpose Transistors

General Purpose Transistors NPN Silicon

文件：194.55 Kbytes 页数：4 Pages

ETL

亚历电子

SMD NPN Transistor

General Purpose Transistors NPN Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V,Machine Model: >400 V • Epitaxial plana chip construction • Ideal for medium power application and switching • As complementary type, the PNP transistor

文件：121.72 Kbytes 页数：9 Pages

FORMOSA

美丽微半导体

丝印：1E；Package：SOT-23；Small Signal Transistors (NPN)

FEATURES ♦ NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. ♦ Especially suited for automatic insertion in thick- and thin-film circuits. ♦ These transistors are subdivided into three groups A, B and C according to their current gain. The typ

文件：301.49 Kbytes 页数：6 Pages

GE

TRANSISTOR (NPN)

FEATURES • Ideally suited for automatic insertion • For Switching and AF Amplifier Applications

文件：2.00929 Mbytes 页数：4 Pages

HTSEMI

金誉半导体

NPN General Purpose Transistor

■ Features ● Ideally suited for automatic insertion ● For switching and AF amplifier applications

文件：41.67 Kbytes 页数：2 Pages

KEXIN

科信电子