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BC846S

NPNSiliconAFTransistorArrays

NPNSiliconAFTransistorArrays •ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Two(galvanic)internalisolatedtransistors withgoodmatchinginonepackage •BC846S/U,BC847S:Fororientationinreelsee packageinfo

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BC846S

SMDGeneralPurposeNPNTransistors

DiotecDiotec Semiconductor

德欧泰克

BC846S

GeneralPurposeTransistors

GeneralPurposeTransistors NPNSilicon •MoistureSensitivityLevel:1 •ESDRating–HumanBodyModel:>4000V –MachineModel:>400V

FS

First Silicon Co., Ltd

BC846S

NPNgeneralpurposeTransistor

FEATURES ●Highcurrentgain. ●ExcellenthFElinearity. ●Lownoisebetween30Hzand15kHz. ●ForAFinputstagesanddriverapplications. APPLICATIONS ●Generalpurposeswitchingandamplification.

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

BC846S

NPNgeneralpurposedoubletransistor

Featuresandbenefits •Twotransistorsinonepackage •Reducesnumberofcomponentsandboardspace •Nomutualinterferencebetweenthetransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BC846S

NPNNPNPlastic-EncapsulateTransistors

Features Highcurrentgain Excellenthrelinearity Lownoise

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟电子台舟电子股份有限公司

BC846S-A

GeneralPurposeTransistors

GeneralPurposeTransistors NPNSilicon •MoistureSensitivityLevel:1 •ESDRating–HumanBodyModel:>4000V –MachineModel:>400V

FS

First Silicon Co., Ltd

BC846S-B

GeneralPurposeTransistors

GeneralPurposeTransistors NPNSilicon •MoistureSensitivityLevel:1 •ESDRating–HumanBodyModel:>4000V –MachineModel:>400V

FS

First Silicon Co., Ltd

BC846S-C

GeneralPurposeTransistors

GeneralPurposeTransistors NPNSilicon •MoistureSensitivityLevel:1 •ESDRating–HumanBodyModel:>4000V –MachineModel:>400V

FS

First Silicon Co., Ltd

BC846SH

65V,100mANPN/NPNgeneral-purposedoubletransistor

Featuresandbenefits •Lowcollectorcapacitance •Lowcollector-emittersaturationvoltage •Closelymatchedcurrentgain •Reducesnumberofcomponentsandboardspace •Nomutualinterferencebetweenthetransistors •High-temperatureapplicationsupto175°C

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

详细参数

  • 型号:

    BC846P

  • 制造商:

    Infineon Technologies AG

  • 功能描述:

    Transistor Array NPN/PNP 65V 0.1A SOT363

供应商型号品牌批号封装库存备注价格
INFINEON
24+
SOT-363SOT-323-6
9200
新进库存/原装
询价
S+M
24+
原厂封装
47500
原装现货假一罚十
询价
ON
24+
SOT-363
5000
只做原装公司现货
询价
Infineon
24+
NA
3000
进口原装正品优势供应
询价
INFINEON
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
infineon
16+
原厂封装
10000
全新原装正品,代理优势渠道供应,欢迎来电咨询
询价
SOT-363
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
INFINEON
23+
SOT363-6
63000
原装正品现货
询价
Infineon/英飞凌
1948+
SOT-363
6852
只做原装正品现货!或订货假一赔十!
询价
INF
23+
126
询价
更多BC846P供应商 更新时间2025-7-25 16:30:00