BC846BPNH

丝印：7H；Package：TSSOP6；65 V, 100 mA NPN/PNP general-purpose double transistor

Featuresandbenefits •Lowcollectorcapacitance •Lowcollector-emittersaturationvoltage •Closelymatchedcurrentgain •Reducesnumberofcomponentsandboardspace •Nomutualinterferencebetweenthetransistors •High-temperatureapplicationsupto175°C

BC846BPNH-Q

丝印：7H；Package：TSSOP6；65 V, 100 mA NPN/PNP general-purpose double transistor

Featuresandbenefits •Lowcollectorcapacitance •Lowcollector-emittersaturationvoltage •Closelymatchedcurrentgain •Reducesnumberofcomponentsandboardspace •Nomutualinterferencebetweenthetransistors •High-temperatureapplicationsupto175°C •QualifiedaccordingtoA

BC846BPNH-Q

65 V, 100 mA NPN/PNP general-purpose double transistor; • Low collector capacitance\n• Low collector-emitter saturation voltage\n• Closely matched current gain\n• Reduces number of components and board space\n• No mutual interference between the transistors\n• High-temperature applications up to 175 °C\n• Qualified according to AEC-Q101 and recommended for use in automotive applications\n;

NPN/PNP general-purpose double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.\n NPN/NPN complement: BC846BSH-Q\n PNP/PNP complement: BC856BSH-Q\n

BC846BPN-Q

65V,100mANPN/PNPgeneral-purposetransistor

1.Generaldescription NPN/PNPgeneral-purposetransistorpairinaverysmallSOT363(SC-88)Surface-Mounted Device(SMD)plasticpackage. NPN/NPNcomplement:BC846BS-Q PNP/PNPcomplement:BC856BS-Q 2.Featuresandbenefits •Lowcollectorcapacitance •Lowcollector-emittersaturationv

BC846BQ

NPNGeneralPurposeAmplifier

BC846B-Q

65V,100mANPNgeneral-purposetransistors

Featuresandbenefits •General-purposetransistors •SMDplasticpackages •Twodifferentgainselections •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications