SURFACE MOUNT SILICON NPN TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR BC817 and BC818 series devices are silicon NPN transistors, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications.

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Central

Surface mount Si-Epitaxial PlanarTransistors

• Power dissipation 310 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

文件：188.12 Kbytes 页数：2 Pages

Diotec

德欧泰克

Surface mount Si-Epitaxial PlanarTransistors

Features General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Typical Applications Signal processing, Switching, Amplification Commercial grade Suffix -Q: AEC-Q101 compliant 1) Suffix -AQ: in AEC-Q101 qualification 1) Mechanical Data 1) Taped an

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Diotec

德欧泰克

NPN Silicon AF Transistors

● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC807, BC808 (PNP)

文件：47.67 Kbytes 页数：5 Pages

Infineon

英飞凌

NPN Silicon General Purpose Transistors

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Capable of 0.3Watts of Power Dissipation. • Collector-current 0.5A • Collector-base Voltage 30V • Operating and storage junct

文件：242.34 Kbytes 页数：3 Pages

MCC

NPN General Purpose Amplifier

FEATURES ● For general AF application. ● Complementary PNP type available BC808. ● High collector current, high current gain. ● Low collector-emitter saturation voltage. APPLICATIONS ● General purpose medium power amplifier.

文件：191.31 Kbytes 页数：4 Pages

BILIN

银河微电

TRANSISTOR (NPN)

FEATURES ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage

文件：361.75 Kbytes 页数：2 Pages

HTSEMI

金誉半导体

Plastic-Encapsulate Transistors

FEATURES For general AF applications High collector current High current gain Low collector-emitter saturation voltage

文件：186.07 Kbytes 页数：2 Pages

HOTTECH

合科泰

Plastic-Encapsulate Transistors

FEATURES For general AF applications High collector current High current gain Low collector-emitter saturation voltage

文件：186.07 Kbytes 页数：2 Pages

HOTTECH

合科泰

NPN Silicon AF Transistors

● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC 807, BC 808 (PNP)

文件：130.699 Kbytes 页数：5 Pages

SIEMENS

西门子