Surface mount Si-Epitaxial PlanarTransistors

• Power dissipation 310 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

文件：188.12 Kbytes 页数：2 Pages

Diotec

德欧泰克

丝印：6D*；Package：SOT-23；45 V, 500 mA NPN general-purpose transistors

General description NPN general-purpose transistors. Features ■ High current ■ Low voltage Applications ■ General-purpose switching and amplification

文件：245.5 Kbytes 页数：19 Pages

恩XP

NPN General Purpose Amplifier

FEATURES ● For general AF application. ● Complementary PNP type available BC807. ● High collector current, high current gain. ● Low collector-emitter saturation voltage.

文件：293.03 Kbytes 页数：5 Pages

BILIN

银河微电

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for use in drive and output stages of audio amplifiers.

文件：228.14 Kbytes 页数：1 Pages

DCCOM

道全

Small Signal Transistors (NPN)

FEATURES ♦ NPN Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier applications. ♦ Especially suited for automatic insertion in thick- and thin-film circuits. ♦ These transistors are subdivided into three groups -16, -25 and -40 according to their current gain. ♦ As com

文件：227.3 Kbytes 页数：5 Pages

GE

TRANSISTOR (NPN)

FEATURES ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC807 (PNP)

文件：311.1 Kbytes 页数：2 Pages

HTSEMI

金誉半导体

NPN Silicon AF Transistors

Features ● For general AF applications. ● High collector current. ● High current gain. ● Low collector-emitter saturation voltage.

文件：40.49 Kbytes 页数：1 Pages

KEXIN

科信电子

High current application

Descriptions • High current application • Switching application Features • Suitable for AF-Driver stage and low power output stages • Complementary pair with BC807

文件：260.35 Kbytes 页数：4 Pages

KODENSHI

可天士

NPN GENERAL PURPOSE TRANSISTORS

VOLTAGE 45 Volts POWER 225 mWatts FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 500mA • Pb free product are available : 99 Sn above can meet RoHS environment substance directive request

文件：462.17 Kbytes 页数：3 Pages

PANJIT

強茂

NPN Plastic Encapsulate Transistors

FEATURES • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807 (PNP)

文件：208.88 Kbytes 页数：2 Pages

SECOS

喜可士