首页 >BC807-16W T/R>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
PNPgeneralpurposetransistor DESCRIPTION PNPtransistorinaSOT23plasticpackage. NPNcomplements:BC817. FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.45V). APPLICATIONS •Generalpurposeswitchingandamplification. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
PNPSURFACEMOUNTTRANSISTOR Features 310mWPowerDissipation IdeallySuitedforAutomaticInsertion EpitaxialPlanarDieConstruction ForSwitching,AFDriverandAmplifier Applications ComplementaryNPNTypesAvailable(BC817) | TRSYS Transys Electronics | TRSYS | ||
PNPSiliconAFTransistors(ForgeneralAFapplicationsHighcollectorcurrentHighcurrentgain) ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC817,BC818(NPN) | SIEMENS Siemens Ltd | SIEMENS | ||
SwitchingandAmplifierApplications SwitchingandAmplifierApplications •SuitableforAF-Driverstagesandlowpoweroutputstages •ComplementtoBC817/BC818 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
PNPSURFACEMOUNTTRANSISTOR Features ●IdeallySuitedforAutomaticInsertion ●EpitaxialPlanarDieConstruction ●ComplementaryNPNTypesAvailable(BC817) ●ForswitchingandAFAmplifierApplications ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.GreenDevice(Note3) | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
PNPSURFACEMOUNTTRANSISTOR Features 310mWPowerDissipation IdeallySuitedforAutomaticInsertion EpitaxialPlanarDieConstruction ForSwitching,AFDriverandAmplifierApplications ComplementaryNPNTypesAvailable(BC817) | TEL TRANSYS Electronics Limited | TEL | ||
PNPGeneralPurposeAmplifier SwitchingandAmplifierApplications •SuitableforAF-Driverstagesandlowpoweroutputstages •ComplementtoBC817/BC818 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
GeneralPurposeTransistorPNPSilicon GeneralPurposeTransistorPNPSilicon P/bLead(Pb)-Free | WEITRONWEITRON 威堂電子科技 | WEITRON | ||
PNPSURFACEMOUNTTRANSISTOR Features ●IdeallySuitedforAutomaticInsertion ●EpitaxialPlanarDieConstruction ●ComplementaryNPNTypesAvailable(BC817) ●ForswitchingandAFAmplifierApplications ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.GreenDevice(Note3) | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
PNPGENERALPURPOSETRANSISTORS VOLTAGE45Volts POWER225mWatts FEATURES •Generalpurposeamplifierapplications •PNPepitaxialsilicon,planardesign •CollectorcurrentIC=500mA •Pbfreeproductareavailable:99Snabovecanmeet RoHSenvironmentsubstancedirectiverequest MECHANICALDATA Case:SOT-2 | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | PANJIT | ||
PNPGeneralPurposeAmplifier FEATURES Ideallysuitedforautomaticinsertion. ComplementaryNPNtypeavailableBC817 Epitaxialplanardieconstruction. APPLICATIONS Thisdeviceisdesignedforgeneralpurposeamplifierandswitchingapplicationsatcurrentsto1.0A. | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | BILIN | ||
GeneralPurposeTransistor | WEITRONWEITRON 威堂電子科技 | WEITRON | ||
PNPSiliconAFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
TRANSISTOR(PNP) FEATURES ·Ldeallysuitedforautomaticinsertion ·epitaxialplanardieconstruction ·complementaryNPNtypeavailable(BC817) | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | HTSEMI | ||
PNPGENERALPURPOSETRANSISTORS | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | PANJIT | ||
PNPPlasticEncapsulateTransistor FEATURES Ideallysuitedforautomaticinsertion Epitaxialplanardieconstruction ComplementarytoBC817(NPNType) MARKING BC807-16:5A; BC807-25:5B; BC807-40:5C | SECOS SeCoS Halbleitertechnologie GmbH | SECOS | ||
0.3Walts,PNPPlastic-EncasulateTransistor | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | TSC | ||
PNPSiliconGeneralPurposeTransistors Features •Capableof0.3WattsofPowerDissipation. •Collector-current0.5A •Collector-baseVoltage50V •Operatingandstoragejunctiontemperaturerange:-55OCto+150OC •CaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0andMSLRating1 | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC | ||
SurfacemountSi-EpitaxialPlanarTransistors SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors •Powerdissipation310mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDIOTEC 德欧泰克 | Diotec | ||
0.3WattsPNPPlastic-EncapsulateTransistors Features Ideallysuitedforautomaticinsertion Epitaxialplanardieconstruction Forswitching,AFdriverandamplifierapplications ComplementaryNPNtypeavailable(BC817) QualifiedtoAEC-Q101standardsforhighreliability MechanicalData Case:SOT-23,Molded | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | TSC |
详细参数
- 型号：
BC807-16W T/R
- 功能描述：
两极晶体管 - BJT TRANS GP TAPE-7
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
PNP 集电极—基极电压
- VCBO：
集电极—发射极最大电压
- VCEO：
- 40 V 发射极 - 基极电压
- VEBO：
- 6 V
- 增益带宽产品fT：
直流集电极/Base Gain hfe
- Min：
100 A
- 安装风格：
SMD/SMT
- 封装/箱体：
PowerFLAT 2 x 2
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEXPERIA |
1809+ |
SOT-323-3 |
16750 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Nexperia |
2022+ |
原厂原包装 |
8600 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
PHI |
2147+ |
原厂封装 |
12500 |
原厂原装现货,订货价格优势,终端BOM表可配单提供样 |
询价 | ||
PHI |
2305+ |
原厂封装 |
12500 |
15年芯片行业经验/只供原装正品:0755-83267371邹小姐 |
询价 | ||
NXP USA Inc. |
21+ |
NA |
12000 |
正品专卖,进口原装深圳现货 |
询价 | ||
NXP USA Inc. |
2022+ |
- |
6680 |
原厂原装，欢迎咨询 |
询价 | ||
DIODES-美台 |
24+25+/26+27+ |
SOT-323 |
18800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
DIODES |
2017+ |
SOT-323 |
55688 |
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增 |
询价 | ||
Diodes |
07+/08+ |
SOT-323 |
7500 |
询价 | |||
DIODES |
23+ |
SOT323 |
253223 |
原装正品现货 |
询价 |
相关规格书
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- BC80716WE6327
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相关库存
更多- BC807-16W-7
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- BC807215
- BC807-25
- BC807-25 _R1 _00001
- BC807-25,215
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- BC80740B5000XT
- BC807-40CLT1
- BC807-40E6327
- BC80740E6327T
- BC807-40E6433
- BC80740E6767
- BC80740LT1
- BC807-40LT1G
- BC807-40LT3G
- BC807-40-MTF
- BC807-40T/R
- BC80740TC
- BC807-40W
