BC807-16QB-Q

45 V, 500 mA PNP general-purpose transistors

Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •Qualifiedaccordingto

BC807-16QB-Q

45 V, 500 mA NPN general-purpose transistors

Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •Qualifiedaccordingto

BC807-16QB-QZ

包装：散装 封装/外壳：3-XDFN 裸露焊盘 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 45V 0.5A DFN1110D-3

BC807-16

PNPgeneralpurposetransistor

DESCRIPTION PNPtransistorinaSOT23plasticpackage. NPNcomplements:BC817. FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.45V). APPLICATIONS •Generalpurposeswitchingandamplification.

BC807-16

PNPSiliconAFTransistors(ForgeneralAFapplicationsHighcollectorcurrentHighcurrentgain)

●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC817,BC818(NPN)

BC807-16

SwitchingandAmplifierApplications

SwitchingandAmplifierApplications •SuitableforAF-Driverstagesandlowpoweroutputstages •ComplementtoBC817/BC818

BC807-16

PNPSURFACEMOUNTTRANSISTOR

Features ●IdeallySuitedforAutomaticInsertion ●EpitaxialPlanarDieConstruction ●ComplementaryNPNTypesAvailable(BC817) ●ForswitchingandAFAmplifierApplications ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.GreenDevice(Note3)

BC807-16

PNPSURFACEMOUNTTRANSISTOR

Features 310mWPowerDissipation IdeallySuitedforAutomaticInsertion EpitaxialPlanarDieConstruction ForSwitching,AFDriverandAmplifier Applications ComplementaryNPNTypesAvailable(BC817)

BC807-16

PNPSiliconAFTransistors

PNPSiliconAFTransistor •ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytype:BC817.../W,BC818.../W(NPN) •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101

BC807-16

PNPSURFACEMOUNTTRANSISTOR

Features 310mWPowerDissipation IdeallySuitedforAutomaticInsertion EpitaxialPlanarDieConstruction ForSwitching,AFDriverandAmplifierApplications ComplementaryNPNTypesAvailable(BC817)

BC807-16

PNPGeneralPurposeAmplifier

SwitchingandAmplifierApplications •SuitableforAF-Driverstagesandlowpoweroutputstages •ComplementtoBC817/BC818

BC807-16

GeneralPurposeTransistorPNPSilicon

GeneralPurposeTransistorPNPSilicon P/bLead(Pb)-Free

BC807-16

PNPSURFACEMOUNTTRANSISTOR

Features ●IdeallySuitedforAutomaticInsertion ●EpitaxialPlanarDieConstruction ●ComplementaryNPNTypesAvailable(BC817) ●ForswitchingandAFAmplifierApplications ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.GreenDevice(Note3)

BC807-16

PNPGENERALPURPOSETRANSISTORS

VOLTAGE45Volts POWER225mWatts FEATURES •Generalpurposeamplifierapplications •PNPepitaxialsilicon,planardesign •CollectorcurrentIC=500mA •Pbfreeproductareavailable:99Snabovecanmeet RoHSenvironmentsubstancedirectiverequest MECHANICALDATA Case:SOT-2

BC807-16

PNPGeneralPurposeAmplifier

FEATURES Ideallysuitedforautomaticinsertion. ComplementaryNPNtypeavailableBC817 Epitaxialplanardieconstruction. APPLICATIONS Thisdeviceisdesignedforgeneralpurposeamplifierandswitchingapplicationsatcurrentsto1.0A.

BC807-16

GeneralPurposeTransistor

BC807-16

PNPSiliconAFTransistor

BC807-16

TRANSISTOR(PNP)

FEATURES ·Ldeallysuitedforautomaticinsertion ·epitaxialplanardieconstruction ·complementaryNPNtypeavailable(BC817)

BC807-16

PNPGENERALPURPOSETRANSISTORS

BC807-16

PNPPlasticEncapsulateTransistor

FEATURES Ideallysuitedforautomaticinsertion Epitaxialplanardieconstruction ComplementarytoBC817(NPNType) MARKING BC807-16:5A; BC807-25:5B; BC807-40:5C