SILICON PLANAR EPITAXIAL TRANSISTORS

SILICON PLANAR EPITAXIAL TRANSISTORS High Current Transistor

文件：121.16 Kbytes 页数：5 Pages

CDIL

isc Silicon NPN Power Transistor

DESCRIPTION • DC Current Gain - : hFE = 40(Min.)@ IC= 25mA • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min.) • Complement to Type BD638 APPLICATIONS • Designed for amplifier and switching applications.

文件：246.24 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION • DC Current Gain - : hFE = 40(Min.)@ IC= 25mA • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min.) • Complement to Type BD638 APPLICATIONS • Designed for amplifier and switching applications.

文件：124.18 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

500 WATTS (AC) DC/D CSINGLE OUTPUT

Features • Single Output • 3U x 42TE x 166.5mm • Weight: 3.5kg

文件：501.68 Kbytes 页数：1 Pages

POWERBOX