BC558A

PNP SILICON TRANSISTORS

PNPSiliconTransistors

BC558A

Si-Epitaxial PlanarTransistors

GeneralPurposePNPTransistors •Powerdissipation500mW •PlasticcaseTO-92 •Weightapprox.0.18g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedinammopack

BC558A

PNP General Purpose Transistor

PNPGeneralPurposeTransistor

BC558A

Elektronische Bauelemente

FEATURES Powerdissipation PCM:0.625W(Tamb=25℃) Collectorcurrent ICM:-0.1A Collector-basevoltage VCBO:BC556-80V BC557-50V BC558-30V Operatingandstoragejunctiontemp

BC558A

PNP SILICON PLANAR EPITAXIAL TRANSISTORS

PNPSILICONPLANAREPITAXIALTRANSISTORS AmplifierTransistors

BC558A

General Purpose PNP Transistors

BC558A

PNP Silicon Planar Epitaxial Transistors

BC558A

PNP Silicon Amplifier Transistor 625mW

BC558A-AP

Package：TO-226-3，TO-92-3（TO-226AA）成形引线；包装：带盒（TB） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 30V 0.1A TO92

BC558ABU

Package：TO-226-3，TO-92-3 标准主体（!--TO-226AA）；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 30V 0.1A TO92-3