丝印：BC557B；Package：TO-923L；PNP Epitaxial Silicon Transistor

Features • Switching and Amplifier • High-Voltage: BC556, VCEO = -65 V • Low-Noise: BC559, BC560 • Complement to BC546, BC547, BC548, BC549, and BC550

文件：336.46 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：BC557B；Package：TO-923L；PNP Epitaxial Silicon Transistor

Features • Switching and Amplifier • High-Voltage: BC556, VCEO = -65 V • Low-Noise: BC559, BC560 • Complement to BC546, BC547, BC548, BC549, and BC550

文件：336.46 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

PNP general purpose transistors

DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. NPN complements: BC546, BC547 and BC548. FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification.

文件：47.79 Kbytes 页数：8 Pages

PHI

飞利浦

PNP SILICON PLANAR EPITAXIAL TRANSISTORS

PNP SILICON PLANAR EPITAXIAL TRANSISTORS APPLICATION PNP General Purpose Transistors, Especially Suited For Use in Driver Stages of Audio Amplifier, Low Noise Input Stages of Tape Recorders, HI-FI Amplifiers, Signal Processing Circuits of Television Receivers.

文件：58.97 Kbytes 页数：3 Pages

boca

博卡

PNP SILICON PLANAR EPITAXIAL TRANSISTORS

PNP SILICON PLANAR EPITAXIAL TRANSISTORS Amplifier Transistors

文件：358.64 Kbytes 页数：5 Pages

CDIL

Si-Epitaxial PlanarTransistors

General Purpose PNP Transistors • Power dissipation 500 mW • Plastic case TO-92 • Weight approx. 0.18 g • Plastic material has UL classification 94V-0 • Standard packaging taped in ammo pack

文件：144.86 Kbytes 页数：2 Pages

Diotec

德欧泰克

Amplifier Transistors

Amplifier Transistors PNP Silicon

文件：220.19 Kbytes 页数：6 Pages

Motorola

摩托罗拉

Elektronische Bauelemente

FEATURES Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: -0.1 A Collector-base voltage VCBO: BC556 -80 V BC557 -50 V BC558 -30 V Operating and storage junction temp

文件：313.16 Kbytes 页数：3 Pages

SECOS

喜可士

PNP SILICON TRANSISTORS

PNP Silicon Transistors

文件：213.33 Kbytes 页数：6 Pages

SIEMENS

西门子

TRANSISTOR (PNP)

FEATURES Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: -0.1 A Collector-base voltage VCBO: BC556 -80 V BC557 -50 V BC558 -30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：68.56 Kbytes 页数：1 Pages

WINNERJOIN

永而佳