NPN General Purpose Amplifier

Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560

文件：21.97 Kbytes 页数：2 Pages

FAIRCHILD

仙童半导体

Amplifier Transistors(NPN Silicon)

Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available*

文件：140.48 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

Amplifier Transistors

文件：124.68 Kbytes 页数：5 Pages

CDIL

Si-Epitaxial PlanarTransistors

Features General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Typical Applications Signal processing, Switching, Amplification Commercial grade 1) Mechanical Data 1) (1) Taped in ammo pack 4000 (Raster 2.54) (2) On request: in bulk 5000 (Ra

文件：148.76 Kbytes 页数：2 Pages

DIOTEC

德欧泰克

NPN Silicon Amplifier Transistor 625mW

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Through Hole Package • 150°C Junction Temperature • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon request by adding suffix

文件：301.48 Kbytes 页数：5 Pages

MCC

NPN SILICON AMPLIFIER TRANSISTOR

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Through Hole Package • 150°C Junction Temperature • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon request by adding suffix -HF

文件：540.84 Kbytes 页数：4 Pages

SUNMATE

森美特

NPN General Purpose Amplifier

NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics.

文件：72.62 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN GENERAL PURPOSE TRANSISTOR

VOLTAGE 30V/45V/65V POWER 625 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector current IC = 100mA • Complimentary (PNP) device:BC556,BC557,BC558 Series • Pb free product :99 Sn above can meet RoHS environment substance directive request

文件：160.26 Kbytes 页数：5 Pages

PANJIT

強茂

Elektronische Bauelemente

FEATURES Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: 0.1 A Collector-base voltage VCBO: BC546 80 V BC547 50 V BC548 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：183.96 Kbytes 页数：3 Pages

SECOS

喜可士

NPN Silicon Transistors

NPN Silicon Transistors

文件：210.85 Kbytes 页数：6 Pages

SIEMENS

西门子