45 V, 1 A PNP medium power transistors

NPN medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. • High collector current capability IC and ICM\n• Reduced Printed-Circuit Board (PCB) area requirements\n• Exposed heat sink for excellent thermal and electrical conductivity\n• Two current gain selections\n• Leadless very small SMD plastic package with medium power capability\n• Suitable for Automa;

Nexperia

安世

NPN Silicon AF Transistors (For AF driver and output stages High collector current)

●For AF driver and output stages ●High collector current ●Low collector-emitter saturation voltage ●Complementary types: BCP 51 … BCP 53 (PNP)

文件：131.42 Kbytes 页数：5 Pages

SIEMENS

西门子

NPN Silicon AF Transistors

NPN Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP51 ... BCP53 (PNP)

文件：48.04 Kbytes 页数：5 Pages

INFINEON

英飞凌

45 V, 1 A NPN medium power transistors

1. General description NPN medium power transistor in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 q

文件：252.29 Kbytes 页数：13 Pages

NEXPERIA

安世

45 V, 1 A NPN medium power transistors

文件：299.68 Kbytes 页数：22 Pages

EPCOS

爱普科斯

45 V, 1 A NPN medium power transistors

1. General description NPN medium power transistor in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • Qualified

文件：241.37 Kbytes 页数：13 Pages

NEXPERIA

安世