丝印：BT；Package：SOT1061；60 V, 1 A PNP medium power transistors

1. General description PNP medium power transistors in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High current • Three current gain selections • High power dissipation capability • Exposed heatsink for excellent thermal an

文件：249.87 Kbytes 页数：13 Pages

NEXPERIA

安世

60 V, 1 A PNP medium power transistors

PNP medium power transistors in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package.

Nexperia

安世

45 V/60 V/80 V, 1 A PNP medium power transistors

General description PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. Features and benefits ■ High collector current capability IC

文件：903.25 Kbytes 页数：15 Pages

NEXPERIA

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60 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Reduced Printed-Circuit Board (PCB) area requirements • Exposed heat sink for excellent thermal and electrical conductivity • Two current gain selections • Leadless very small SMD plastic package with medium power capabili

文件：261.35 Kbytes 页数：11 Pages

NEXPERIA

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PNP Silicon AF Transistors (For AF driver and output stages High collector current)

PNP Silicon AF Transistors ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCP 54 … BCP 56 (NPN)

文件：140.02 Kbytes 页数：5 Pages

SIEMENS

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