丝印：BC517；Package：TO-92；NPN Darlington Transistor

文件：621.37 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：BC517；Package：TO-92；NPN Darlington Transistor

文件：621.37 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Darlington Transistors(NPN Silicon)

Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available*

文件：148.28 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

NPN Darlington transistor

DESCRIPTION NPN Darlington transistor in a TO-92; SOT54 plastic package. PNP complement: BC516. FEATURES • High current (max. 500 mA) • Low voltage (max. 30 V) • Very high DC current gain (min. 30000). APPLICATIONS • Where very high amplification is required.

文件：43.99 Kbytes 页数：8 Pages

PHI

飞利浦

Darlington Transistors

Darlington Transistors NPN Silicon

文件：206.21 Kbytes 页数：6 Pages

Motorola

摩托罗拉

NPN Silicon Darlington Transistor (High current gain High collector current)

NPN Silicon Darlington Transistor ● High current gain ● High collector current ● Complementary type: BC 516 (PNP)

文件：138.87 Kbytes 页数：4 Pages

SIEMENS

西门子

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR)

GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR.

文件：181.04 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

COMPLEMENTARY SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTOR

The BC516(PNP) and BC517(NPN) are complementary silicon planar epitaxial darlington transistors designed for preamplifier input stages requiring high input impendence and high gain.

文件：68.35 Kbytes 页数：1 Pages

MICRO-ELECTRONICS

NPN Silicon Darlington Transistor

NPN Silicon Darlington Transistor TO-92 Plastic Package Weight approx. 0.19g

文件：79.98 Kbytes 页数：1 Pages

SEMTECH_ELEC

先之科半导体

NPN Darlington Transistor

Features • This Device is Designed for Applications Requiring Extremely High Current Gain at Currents to 1.0 A • Sourced from Process 05 • This is a Pb−Free Device

文件：171.4 Kbytes 页数：5 Pages

ONSEMI

安森美半导体