Amplifier Transistors

Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available*

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ONSEMI

安森美半导体

Si-Epitaxial PlanarTransistors

General Purpose Si-Epitaxial Planar Transistors • Power dissipation 625 mW • Plastic case TO-92(10D3) • Weight approx. 0.18 g • Plastic material has UL classification 94V-0 • Standard packaging taped in ammo pack

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DIOTEC

德欧泰克

NPN Plastic-Encapsulate Transistors

Features • Halogen free available upon request by adding suffix -HF • Capable of 0.625Watts of Power Dissipation. • Collector-current 0.8A • Collector-base Voltage :VCBO=50V(BC337) , VCBO=30V(BC338) • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering inform

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MCC

Amplifier Transistor

The LM337 is an adjustable 3–terminal negative voltage regulator capable of supplying in excess of 1.5 A over an output voltage range of –1.2 V to – 37 V. This voltage regulator is exceptionally easy to use and requires only two external resistors to set the output voltage. Further, it employs i

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MOTOROLA

摩托罗拉

NPN Transistor

Small Signal Product Features ◇ For switching and AF amplifier applications ◇ These types are subdivided into three groups -16, -25 and -40, according to their DC current gain ◇ Moisture sensitivity level 1 ◇ Driver transistor ◇ Pb free version and RoHS compliant ◇ Green compound (Halog

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TSC

台湾半导体

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: 0.8 A Collector-base voltage VCBO: BC337 50 V BC338 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

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JIANGSU

长电科技

NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage)

● High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 327, BC 328 (PNP)

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SIEMENS

西门子

TRANSISTOR (NPN)

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WINNERJOIN

永而佳

NPN Plastic-Encapsulate Transistors

文件：375.13 Kbytes 页数：4 Pages

MCC

NPN Plastic-Encapsulate Transistors

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MCC