BC337-40

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:0.625W(Tamb=25℃) Collectorcurrent ICM:0.8A Collector-basevoltage VCBO:BC33750V BC33830V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

BC337-40

AmplifierTransistorsNPNSilicon

BC337-40

AmplifierTransistors

AmplifierTransistorsNPNSilicon Features •Pb−FreePackagesareAvailable*

BC337-40

Si-EpitaxialPlanarTransistors

GeneralPurposeSi-EpitaxialPlanarTransistors •Powerdissipation625mW •PlasticcaseTO-92(10D3) •Weightapprox.0.18g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedinammopack

BC337-40

NPNSiliconAFTransistors(HighcurrentgainHighcollectorcurrentLowcollector-emittersaturationvoltage)

●Highcurrentgain ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC327,BC328(PNP)

BC337-40

NPNgeneralpurposetransistor

DESCRIPTION NPNtransistorinaTO-92;SOT54plasticpackage. PNPcomplement:BC327. FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.45V). APPLICATIONS •Generalpurposeswitchingandamplification, e.g.driverandoutputstagesofaudioamplifiers.

BC337-40

AmplifierTransistor

TheLM337isanadjustable3–terminalnegativevoltageregulatorcapableofsupplyinginexcessof1.5Aoveranoutputvoltagerangeof–1.2Vto–37V.Thisvoltageregulatorisexceptionallyeasytouseandrequiresonlytwoexternalresistorstosettheoutputvoltage.Further,itemploysi

CC337-40

TO-92PlasticPackageTransistors(NPN)