丝印：BC327；Package：TO-923L；PNP Epitaxial Silicon Transistor

Features • Switching and Amplifier Applications • Suitable for AF-Driver Stages and Low-Power Output Stages • Complement to BC337 / BC338

文件：230.79 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Package：TO-226-3，TO-92-3 标准主体（!--TO-226AA）；包装：带盒（TB） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 45V 0.8A TO92-3

ONSEMI

安森美半导体

PNP general purpose transistor

DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. NPN complement: JC337. FEATURES • High current (max. 500 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification, e.g. driver and output stages of audio amplifiers.

文件：42.25 Kbytes 页数：8 Pages

PHI

PHI

BROADBAND RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band Minimum Gain = 7.3 dB @ 400 MHz • Bu

文件：166.78 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Silicon NPN Transistor Power Amp, Switch

Description: The NTE327 is a silicon NPN transistor in a TO3 type package designed for use in industrial amplifier and switching circuit applications. Features: ● High Collector–Emitter Sustaining Voltage ● High DC Current Gain ● Low Collector–Emitter Saturation Voltage ● Fast Switching Time

文件：24.85 Kbytes 页数：2 Pages

NTE