场效应晶体管

CBI

创基电子

P-Channel MOSFET in a SOT-323 Plastic Package

文件：1.02063 Mbytes 页数：7 Pages

FOSHAN

蓝箭电子

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V, -4.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 62mΩ @VGS = -2.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ TSOP-6 package. ■ Lead free product is acquired.

文件：131.14 Kbytes 页数：4 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -4.8A, RDS(ON) = 55mW @VGS = -4.5V. RDS(ON) = 62mW @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. Lead-free plating ; RoHS compliant.

文件：411.83 Kbytes 页数：4 Pages

CET-MOS

华瑞