P-Channel Enhancement Mode Power MOSFET

Features ⚫ Halogen and Antimony Free ⚫ VDS= -60V,ID= -2A RDS(on)

文件：814.21 Kbytes 页数：5 Pages

HUIXIN

慧芯电子

场效应管

Bluecolour

蓝彩电子

Plastic-Encapsulate MOSFETS

DESCRIPTION The BC2309A uses advanced trench technology to provide excellent R This device is suitable for use as a uni-directional or bi-directional load switch. DS(on)

文件：503.86 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

Non-isolated step-down active PFC LED driver picture

文件：401.05 Kbytes 页数：8 Pages

BPSBright Power Semiconductor Co., Ltd.

晶丰明源上海晶丰明源半导体股份有限公司

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V, -2.2A, RDS(ON) = 165mΩ @VGS = -4.5V. RDS(ON) = 300mΩ @VGS = -2.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-23 package.

文件：139.06 Kbytes 页数：4 Pages

CET

华瑞

T-1 3/4 Bi-Pin Base (.125)

T-1 3/4 Bi-Pin Base (.125)

文件：218.38 Kbytes 页数：1 Pages

CML