首页 >BBCC106D>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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SINGLE-PHASEGLASSPASSIVATEDSILICONBRIDGERECTIFIER | RECTRON Rectron Semiconductor | RECTRON | ||
NPN5GHzwidebandtransistor DESCRIPTION NPNsiliconplanarepitaxialtransistorinaplasticSOT23envelope.Itisprimarilyintendedforlownoise,generalRFapplications. | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPNSiliconRFTransistor(Forlownoise,high-gainamplifiersForlinearbroadbandamplifiers) NPNSiliconRFTransistor •Forlownoise,high-gainamplifiers •Forlinearbroadbandamplifiers •Specialapplication:antennaamplifiers •Complementarytype:BFR194(PNP) | SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司 | SIEMENS | ||
NPNSiliconRFTransistor LowNoiseSiliconBipolarRFTransistor •HighlinearitylownoiseRFtransistor •22dBmOP1dBand31dBmOIP3@900MHz,8V,70mA •ForUHF/VHFapplications •Driverformultistageamplifiers •Forlinearbroadbandandantennaamplifiers •Collectordesignsupports5Vsupplyvoltage | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
NPNSiliconRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
LowNoiseSiliconBipolarRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
SiliconNPNRFTransistor DESCRIPTION •LowNoiseFigure NF=2.5dBTYP.@VCE=8V,IC=20mA,f=900MHz •HighGain ︱S21e︱2=10.5dBTYP.@VCE=8V,IC=70mA,f=900MHz APPLICATIONS •Designedforuseinlownoise,high-gainamplifiersandlinearbroadbandamplifiers. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
LowNoiseFigure DESCRIPTION •LowNoiseFigure NF=2.5dBTYP.@VCE=8V,IC=20mA,f=900MHz •HighGain ︱S21e︱2=10.5dBTYP.@VCE=8V,IC=70mA,f=900MHz APPLICATIONS •Designedforuseinlownoise,high-gainamplifiersandlinearbroadbandamplifiers. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
NPN5GHzwidebandtransistor | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
SIMCardInterfaceFilterandESDProtection | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
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