首页 >BBCC106D>规格书列表

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

BDB106

SINGLE-PHASEGLASSPASSIVATEDSILICONBRIDGERECTIFIER

RECTRON

Rectron Semiconductor

BFR106

NPN5GHzwidebandtransistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorinaplasticSOT23envelope.Itisprimarilyintendedforlownoise,generalRFapplications.

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

BFR106

NPNSiliconRFTransistor(Forlownoise,high-gainamplifiersForlinearbroadbandamplifiers)

NPNSiliconRFTransistor •Forlownoise,high-gainamplifiers •Forlinearbroadbandamplifiers •Specialapplication:antennaamplifiers •Complementarytype:BFR194(PNP)

SIEMENSSiemens Semiconductor Group

西门子德国西门子股份公司

BFR106

NPNSiliconRFTransistor

LowNoiseSiliconBipolarRFTransistor •HighlinearitylownoiseRFtransistor •22dBmOP1dBand31dBmOIP3@900MHz,8V,70mA •ForUHF/VHFapplications •Driverformultistageamplifiers •Forlinearbroadbandandantennaamplifiers •Collectordesignsupports5Vsupplyvoltage

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BFR106

NPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BFR106

LowNoiseSiliconBipolarRFTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BFR106

SiliconNPNRFTransistor

DESCRIPTION •LowNoiseFigure NF=2.5dBTYP.@VCE=8V,IC=20mA,f=900MHz •HighGain ︱S21e︱2=10.5dBTYP.@VCE=8V,IC=70mA,f=900MHz APPLICATIONS •Designedforuseinlownoise,high-gainamplifiersandlinearbroadbandamplifiers.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

BFR106

LowNoiseFigure

DESCRIPTION •LowNoiseFigure NF=2.5dBTYP.@VCE=8V,IC=20mA,f=900MHz •HighGain ︱S21e︱2=10.5dBTYP.@VCE=8V,IC=70mA,f=900MHz APPLICATIONS •Designedforuseinlownoise,high-gainamplifiersandlinearbroadbandamplifiers.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

BFR106

NPN5GHzwidebandtransistor

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

BGF106C

SIMCardInterfaceFilterandESDProtection

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

供应商型号品牌批号封装库存备注价格