Silicon Epitaxial Planar Diodes

Features • Silicon Epitaxial Planar Diodes • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications  • General purposes

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VishayVishay Siliconix

威世威世科技公司

Small Signal Switching Diodes, High Voltage

Features • Silicon Epitaxial Planar Diodes • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications  • General purposes

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VishayVishay Siliconix

威世威世科技公司

SMALL SIGNAL SWITCHING DIODE

VOLTAGE RANGE: 50-200 V CURRENT: 250 mA FEATURES ◇ Silicon epitaxial planar diode ◇ High speed switching diode ◇ 500 mW power dissipation MECHANICAL DATA ◇ Case: MINI-MELF,glass case ◇ Polarity: Color band denotes cathode ◇ Weight: Approx 0.031 grams

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BILIN

银河微电

HIGH SPEED SWITCHING DIODES

FEATURES : • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 50 V, 100 V, 150 V and 200 V respectively • Repetitive peak reverse voltage: max. 60 V, 120 V, 200 V and 250 V respectively • Repetitive peak forward current: max. 625 mA. • Pb / RoH

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EIC

Small Signal Diodes

Features • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) ​​​​​​​• Moisture Sensitivity Level 1 • Silicon Epitaxial Planar Diodes • These diodes are also available in other case styles including: the DO-35 case with the type desi

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MCC

Small Signal Diodes

Features • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) ​​​​​​​• Moisture Sensitivity Level 1 • Silicon Epitaxial Planar Diodes • These diodes are also available in other case styles including: the DO-35 case with the type desi

文件：765.99 Kbytes 页数：4 Pages

MCC

Ultrafast silicon rectifier diodes

Forward Current: 0,2 A Reverse Voltage: 50 to 300 V Features ● Max. solder temperature: 260°C ● Plastic material has UL classification 94V-0 ● One green ring denotes cathode and ultrafast switching device ● The type numbers are noted only on the lable on the reel

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Semikron

赛米控丹佛斯

500mW Hermetically Sealed Glass High Voltage Switching Diodes

Features ●— High Voltage Switching Device —● Mini Melf package —● Surface device type mounting —● Hermetically sealed glass —● Compression bonded construction —● All external surface are corrosion resistant and leads are readily solderable —● RoHS compliant —● Matte Tin (Sn

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TSC

台湾半导体

HIGH SPEED SWITCHING DIODES

FEATURES : • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 50 V, 100 V, 150 V and 200 V respectively • Repetitive peak reverse voltage: max. 60 V, 120 V, 200 V and 250 V respectively • Repetitive peak forward current: max. 625 mA. • Pb / RoH

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SYNSEMI

Small Signal Diodes

FEATURES ♦ Silicon Epitaxial Planar Diodes ♦ For general purpose ♦ These diodes are also available in other case styles including: the DO-35 case with the type designations BAV19 to BAV21, the SOD-123 case with the type designations BAV19W to BAV21W, and the SOT-23 case with the

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GE