Schottky barrier diode

DESCRIPTION Planar Schottky barrier diode with an integrated protection ring against static discharges, encapsulated in a hermetically-sealed subminiature SOD68 (DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch. FEATURES • Low forward voltage • Guard ring protected

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PHI

飞利浦

SILICON PLANAR SCHOTTKY BARRIER DIODE

SILICON PLANAR SCHOTTKY BARRIER DIODE DO-34 Glass Package Hermetically Sealed, Glass Silicon Diode Ultra High Speed Switching Diode

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CDIL

Small-Signal Diode

Features ◆ For general purpose applications. ◆ This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges ◆ Metal-on-silicon Schottky barrier device which is protected by a PN junction gua

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Good-Ark

固锝电子

SMALL SIGNAL SCHOTTKY DIODES

Features • Moisture Sensitivity: Level 1 per J-STD-020C • For general purpose applications • These diodes features very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage,such as electrostatic discharges. • These di

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MCC

Schottky barrier diode

General description Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a hermetically-sealed subminiature SOD68 (DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch. Features and benefits • Low forward voltage • Guard ring

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恩XP

SMALL SIGNAL SCHOTTKY DIODES

VOLTAGE RANGE: 50 V CURRENT: 0.2 A FEATURES ◇ For general purpose applications ◇ This diodes features very low turn-on voltage and fast switching. This devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges ◇ Metal silicon scho

文件：33.2 Kbytes 页数：1 Pages

BILIN

银河微电

SMALL SIGNAL SCHOTTKY DIODES

Features • For general purpose applications • These diodes features very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage,such as electrostatic discharges. • These diode is also available in the Mini-MELF case with

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CHENYI

商朗电子

Schottky Diodes

FEATURES ♦ For general purpose applications. ♦ This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. ♦ Metal-on-silicon Schottky barrier device which is protected by a PN junc

文件：44.61 Kbytes 页数：2 Pages

GE

SMALL SIGNAL SCHOTTKY DIODES

FEATURES • For general purpose applications • These diodes features very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. • Metal-on- silicon Schottky barrier device which is prot

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JINANJINGHENG

晶恒集团

Schottky Barrier Diodes

Schottky Barrier Diodes

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司