丝印：L8；Package：SOT23；40 V, 200 mA Schottky barrier dual diode

1. General description Planar Schottky barrier dual diode with an integrated guard ring for stress protection, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low forward voltage • Low capacitance • Qualified according to AE

文件：193 Kbytes 页数：8 Pages

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安世安世半导体(中国)有限公司

40 V, 200 mA Schottky barrier dual diode

Planar Schottky barrier dual diode with an integrated guard ring for stress protection, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. • Low forward voltage\n• Low capacitance\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世

Schottky barrier double diodes

DESCRIPTION Planar Schottky barrier diodes encapsulated in a SOT23 small plastic SMD package. Single diodes and double diodes with different pinning are available. FEATURES • Ultra high switching speed • Low forward voltage • Guard ring protected • Small plastic SMD package. APPLICATIONS •

文件：48.29 Kbytes 页数：8 Pages

PHI

飞利浦

SCHOTTKY BARRIER (DOUBLE) DIODES

FEATURES • Ultra high switching speed • Low forward voltage • Guard ring protected • Small plastic SMD package • Ultra high-speed switching • Voltage clamping • Protection circuits • Lead free in compliance with EU RoHS 2011/65/EU directive • Green molding compound as per IEC61249 Std. .

文件：102.64 Kbytes 页数：3 Pages

PANJIT

強茂

Planar Schottky barrier diodes with an integrated guard ring for stress protection. Encapsulated in small Surface-Mounted Device (SMD) plastic packages.

文件：82.44 Kbytes 页数：11 Pages

PHI

飞利浦