BAT720-Q

Marking：L6；Package：SOT23；Schottky barrier diode

1.Generaldescription PlanarSchottkybarrierdiodewithanintegratedguardringforstressprotection,encapsulatedina smallSOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Lowforwardvoltage •Lowcapacitance •QualifiedaccordingtoAEC-Q10

BAT720-QR

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 40V 500MA TO236AB

Nexperia USA Inc.

BAT720-QVL

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 40V 500MA TO236AB

Nexperia USA Inc.

BAT720W

SCHOTTKYBARRIERDIODE

SCHOTTKYBARRIERDIODE FEATURES ●HighSwitchingSpeed ●LowForwardVoltage ●GuardRingProtected APPLICATIONS ●VoltageClamping ●ProtectionCircuits

BAT720WT

350mWSchottkyDiodes40Volts

Features •HalogenFreeAvailableUponRequestByAddingSuffix-HF •VeryLowForwardVoltageDrop. •GuardRingProtected •UntralSmallSurfaceMountPackage •EpoxyMeetsUL94V-0FlammabilityRating •MoistureSensitivityLevel1 •LeadFreeFinish/RoHSCompliant(PSuffixDesignates

BD720

iscSiliconPNPPowerTransistor

DESCRIPTION ·DCCurrentGain-:hFE=40@IC=-0.5A ·Collector-EmitterBreakdownVoltage-:V(BR)CEO=-60V(Min) ·ComplementtotypeBD719 APPLICATIONS ·Designedforuseinaudiooutputandgeneralpurposeamplifierapplications.

BD720

SiliconPNPPowerTransistor

BF720

SurfacemountSi-EpitaxialPlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation–1.5W •PlasticcaseSOT-223 •Weightapprox.–0.04g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

BF720

NPNSiliconHigh-VoltageTransistors(SuitableforvideooutputstagesinTVsetsandswitchingpowersuppliesHighbreakdownvoltage)

●SuitableforvideooutputstagesinTVsetsandswitchingpowersupplies ●Highbreakdownvoltage ●Lowcollector-emittersaturationvoltage ●Lowcapacitance ●Complementarytypes:BF721/723(PNP)

BF720

NPNSILICONPLANARHIGHVOLTAGETRANSISTOR

FEATURES *Highbreakdownandlowsaturationvoltages APPLICATIONS *SuitableforvideooutputstagesinTVsets *Switchingpowersupplies