Schottky barrier diode

DESCRIPTION Silicon epitaxial Schottky barrier diode with an integrated guard ring for stress protection. Intended for high speed switching, circuit protection and voltage clamping applications. The diode is encapsulated in a SOD123 SMD plastic package. FEATURES Low l

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PHI

飞利浦

Schottky barrier diode

DESCRIPTION\nSilicon epitaxial Schottky barrier\ndiode with an integrated guard ring for\nstress protection. Intended for high\nspeed switching, circuit protection\nand voltage clamping applications.\nThe diode is encapsulated in a\nSOD123 SMD plastic package.FEATURES\n Low leakage current\n Low tur  Low leakage current\n Low turn-on and high breakdown voltage\n Ultra-fast switching speed. ;

恩XP

SOD-323

Infineon(英飞凌)

上传：深圳市恒佳微电子有限公司

SOD-323

STMICROELECTRONICS

意法半导体

上传：北京天阳诚业科贸有限公司

SOD523

Infineon

英飞凌

上传：深圳市创博伟业科技有限公司