SMALL SIGNAL SCHOTTKY DIODE, SINGLE & DUAL

PRV : 30 Volts Io : 200 mA FEATURES : * These diodes feature very low turn-on voltage * Fast switching * These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges * Pb / RoHS Free

文件：111.8 Kbytes 页数：2 Pages

EIC

200mA SURFACE MOUNT SCHOTTKY BARRIER RECTIFER

Feature * Low Turn-On Voltage * Fast Switching, Marking: Single,Series,Common Cathode, Anode--BAT54,54S,54C, 54A * Ultra Small Surface mount Package * PN Junction Gard Ring for Transient and ESD protection * Weight: 0.008gram

文件：460.58 Kbytes 页数：2 Pages

FCI

富加宜

250mWatt, 30volt schottky barrier diode

FEATURES • Low Turn-on Voltage • Fast Switching • PN Junction Guard Ring for Transient and ESD Protection

文件：72.75 Kbytes 页数：3 Pages

CHENYI

商朗电子

Surface Mount Schottky Diode

Voltage: 30 Volts Current: 200mA Features • Low Turn-on Voltage • Fast Switching • PN Junction Guard Ring for Transient and • ESD Protection

文件：102.14 Kbytes 页数：2 Pages

COMCHIP

典琦

Surface Mount Schottky Barrier Diode

Features • Low Turn-on Voltage • Fast Switching • PN Junction Guard Ring for Transient and ESD Protection

文件：292.99 Kbytes 页数：2 Pages

DAESAN

丝印：KL2；Package：SOT-23；SCHOTTKY BARRIER DIODE

Features · High Current Capability · Low Forward Voltage Drop · Extremely Fast Switching Speed

文件：506.78 Kbytes 页数：2 Pages

DAESAN

TECHNICAL SPECIFICATIONS OF SMALL SIGNAL SCHOTTKY BARRIER DIODES

VOLTAGE - 30 Volts CURRENT - 0.2 Amperes FEATURES * For general purpose applications * Low turn-on voltage. * Fast switching time. * Protected by a PN junction guard ring against excessive voltage, such as electrostatic discharge(ESD).

文件：254.38 Kbytes 页数：2 Pages

DCCOM

道全

Surface Mount Schottky Diode - Silicon epitaxial planar type

Silicon epitaxial planar type Features • Small surface mounting type • High reliability • High speed ( trr

文件：86.14 Kbytes 页数：2 Pages

FORMOSA

美丽微半导体

Schottky Diodes

FEATURES ♦ These diodes feature very low turn-on voltage and fast switching. ♦ These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic dis charges

文件：51.84 Kbytes 页数：2 Pages

GE

SCHOTTKY DIODES

FEATURES • Extremely Fast Switching Speed

文件：294.63 Kbytes 页数：2 Pages

HTSEMI

金誉半导体