High Voltage Switching Diodes

Features • 175°C TJ(max) − Rated for High Temperature, Mission Critical Applications • Wettable Flank Package for optimal Automated Optical Inspection (AOI) • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP

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ONSEMI

安森美半导体

丝印：MF；Package：X2DFN2；High Voltage Switching Diodes

Features • 175°C TJ(max) − Rated for High Temperature, Mission Critical Applications • Wettable Flank Package for optimal Automated Optical Inspection (AOI) • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP

文件：201.24 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

High Voltage Switching Diode Series, +175°C

The BASHxxMX2W Switching Diode is a spin−off of our popular SOT−23 three−leaded device. It is designed for switching applications and is housed in the X2DFNW2 (1.0x0.6mm) surface mount package.  This device is ideal for low−power surface mount applications, where board space is at a premium. • Wide range of TJ temperature, with max TJ = 175°C\n• Rated for High Temperature, Mission Critical Applications\n• Wettable Flank Package\n• Optimal Automated Optical Inspection(AOI)\n• NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 ;

ONSEMI

安森美半导体

INFINEON
SOT23

Infineon

英飞凌

上传：深圳市上美通科技有限公司

INFINEON英飞凌
SOD323

INFINEON英飞凌

上传：深圳市乐创天科技有限公司