Schottky Diodes

FEATURES ♦ These diodes feature very low turn-on voltage and fast switching. ♦ These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.

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GE

SMALL SIGNAL SCHOTTKY DIODES

DESCRIPTION Low turn-on and high breakdown voltage diodes intended for ultrafast switching and UHF detectors in hybrid micro circuits.

文件：224.43 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

200mW Surface Mount Schottky Barrier Diode

Features • Low turn-on voltage • Fast switching • PN junction guard Ring for transient

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LUGUANG

鲁光电子

丝印：75；Package：SOT-23；SCHOTTKY BARRIER DIODE

FEATURES Low turn-on voltage Fast switching Also available in lead free version

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SY

顺烨电子

SURFACE MOUNT SCHOTTKY BARRIER DIODES

SMALL SIGNAL SCHOTTKY DIODES 0m AMPERES 20 70 VOLTS DESCRIPTION These schottky barrier diodes are designed for high speed switching applications circuit protection, and voltage clamping, Extremely low forward voltage reduces conduction loss, Miniature surface mount package is excellent for hand

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PACELEADER

霈峰

丝印：75；Package：SOT-23；Schottky r e ctifier

FEATURES: ● Low Forward Voltage ● Fast Switching ● Also available in lead free version

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LEIDITECH

雷卯电子

Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing)

Features • HiRel Discrete and Microwave Semiconductor • General-purpose diodes for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • Hermetically sealed microwave package • eesa qualified • ESA/SCC Detail Spec. No.: 5512/020

文件：108.53 Kbytes 页数：5 Pages

SIEMENS

西门子

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features • Low Turn-on Voltage • Fast Switching • PN Junction Guard ring for Transient and ESD Protection.

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SEMTECH_ELEC

先之科半导体

Surface Mount Schottky Barrier Diodes

FEATURES • Low Turn-on Voltage • Low Forward Voltage - 0.75V(Max) @ IF = 10 mA • Very Low Capacitance - Less Than 2.0pF @ 0V • For high speed switching application, circuit protection

文件：91.23 Kbytes 页数：2 Pages

SECOS

喜可士

SCHOTTKY DIODE

FEATURES Power dissipation PD: 200 mW (Tamb=25℃) Collector current IF: 200 mA Collector-base voltage VR: 70 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

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TEL