BAS70-04W

Schottkybarrierdoublediodes

Generaldescription General-purposeSchottkydiodesinsmallSurface-MountedDevice(SMD)plasticpackages. Features ■Highswitchingspeed ■Lowleakagecurrent ■Highbreakdownvoltage ■Lowcapacitance Applications ■Ultrahigh-speedswitching ■Voltageclamping

BAS70-04W

SiliconSchottkyDiode

SiliconSchottkyDiode •General-purposediodeforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing

BAS70-04W

SiliconSchottkyDiode(General-purposediodesforhigh-speedswitchingCircuitprotectionVoltageclamping)

SiliconSchottkyDiode ●General-purposediodesforhigh-speedswitching ●Circuitprotection ●Voltageclamping ●High-leveldetectionandmixing

BAS70-04W

SurfaceMountSchottkyBarrierDiodes

FEATURES •LowTurn-onvoltage •LowForwardVoltage-0.75V(Max)@IF=10mA •VeryLowCapacitance-LessThan2.0pF@0V Forhighspeedswitchingapplication,circuitprotection

BAS70-04W

Schottkybarrier(double)diodes

Features •Lowforwardvoltage •Highbreakdownvoltage •Guardringprotected •VerysmallSMDpackage •Lowcapacitance.

BAS70-04W

SURFACEMOUNTSCHOTTKYBARRIERDIODES

SURFACEMOUNTSCHOTTKYBARRIERDIODES SOT-323FormedSMDPackage UltraHighSpeedSwitchingDiodes

BAS70-04W

SiliconSchottkyDiode

BAS70-04W

SiliconSchottkyDiode

BAS70-04WFILM

Lowcapacitance,lowseriesinductanceandresistanceSchottkydiodes

Description TheBAS70seriesuses70VSchottkybarrierdiodespackagedinSOD-123,SOD-323,SOD-523,SOT-23,SOT-323,SOT-323-6LorSOT-666.ThesediodesarespeciallysuitedforsignaldetectionandtemperaturecompensationinRFapplications. Features ■Verylowconductionlosses ■Neg

BAS70-04W-Q

General-purposedualSchottkydiode

1.Generaldescription General-purposedualSchottkydiodeinasmallSOT323(SC-70)Surface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •Highswitchingspeed •Lowleakagecurrent •Highbreakdownvoltage •Lowcapacitance •QualifiedaccordingtoAEC-Q101andrecomm