High-speed diode

DESCRIPTION The BAS678 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small rectangular plastic SMD SOT23 package. FEATURES • Small plastic SMD package • High switching speed: max. 6 ns • Continuous reverse voltage: max. 80 V • Repetitive peak revers

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PHI

飞利浦

High-speed diode

Features ● Small plastic SMD package ● High switching speed: max. 6ns ● Continuous reverse voltage: max. 80 V ● Repetitive peak forward current: max. 600 mA.

文件：41.15 Kbytes 页数：2 Pages

KEXIN

科信电子

High-speed diode

恩XP

恩智浦

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

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STMICROELECTRONICS

意法半导体

Plastic Medium-Power Silicon PNP Darlingtons

Plastic Medium−Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD

文件：110.03 Kbytes 页数：4 Pages

Motorola

摩托罗拉

NPN SILICON DARLINGTON TRANSISTORS

PNP Silicon Darlington Transistors Epibase power darlington transistors (40W)

文件：134.84 Kbytes 页数：4 Pages

SIEMENS

西门子