High-speed diode

DESCRIPTION The BAS678 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small rectangular plastic SMD SOT23 package. FEATURES • Small plastic SMD package • High switching speed: max. 6 ns • Continuous reverse voltage: max. 80 V • Repetitive peak revers

文件：43.02 Kbytes 页数：7 Pages

PHI

PHI

High-speed diode

Features ● Small plastic SMD package ● High switching speed: max. 6ns ● Continuous reverse voltage: max. 80 V ● Repetitive peak forward current: max. 600 mA.

文件：41.15 Kbytes 页数：2 Pages

KEXIN

科信电子

High-speed diode

恩XP

Plastic Medium-Power Silicon PNP Darlingtons

Plastic Medium−Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD

文件：110.03 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

文件：87.96 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

文件：87.96 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体