SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features • Low forward voltage • Fast switching

文件：119.14 Kbytes 页数：1 Pages

SEMTECH_ELEC

先之科半导体

Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping)

HiRel Silicon Schottky Diode Features • HiRel Discrete and Microwave Semiconductor • General-purpose diodes for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • Hermetically sealed microwave package • ESA Qualification pending

文件：108.44 Kbytes 页数：5 Pages

SIEMENS

西门子

丝印：45；Package：SOT-23；SCHOTTKY BARRIER DIODE

FEATURES Low Forward Voltage Fast Swit c h in g

文件：782.26 Kbytes 页数：4 Pages

SY

顺烨电子

Surface Mount Schottky Barrier Diode

Features ◇ Low turn-on voltage ◇ Fast switching ◇ PN junction guard Ring for transient

文件：143.19 Kbytes 页数：2 Pages

LUGUANG

鲁光电子

Surface mount schottky barrier diode

FEATURES ● Low turn-on voltage. ● Fast switching. ● PN Junction guard ring for transient and ESD protection. APPLICATIONS ● High speed switching applications. ● Circuit protecting. ● Voltage clamping.

文件：336.99 Kbytes 页数：3 Pages

DSK

Low Forward Voltage Drop, Fast Switching

FEATURES ● Low Forward Voltage Drop. ● Fast Switching. ● PN Junction Guard Ring for Transient and ESD Protection.

文件：1.09912 Mbytes 页数：2 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：45；Package：SOT23；General-purpose dual Schottky diode

1. General description General-purpose dual Schottky diode in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed • Low leakage current • High breakdown voltage • Low capacitance 3. Applications • Ultra high-speed swit

文件：876.55 Kbytes 页数：8 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Plastic-Encapsulate Diodes

Plastic-Encapsulate Diodes FEATURES • Low Forward Voltage • Fast Switching

文件：255.45 Kbytes 页数：2 Pages

HOTTECH

合科泰

丝印：L2；200mA Surface Mount Small Signal Diodes

■ Features • Low current rectification and high speed switching. • Small surface mount type. • Up to 200mA current capability. • Low forward voltage drop (VF = 1.00V typ. @40mA). • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-free part, ex.BAS40G. • Le

文件：167.82 Kbytes 页数：3 Pages

CITC

竹懋科技

SCHOTTKY DIODE

FEATURES Power dissipation PD: 200 mW (Tamb=25℃) Forward Current IF: 200 m A Reverse Voltage VR: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：66.17 Kbytes 页数：1 Pages

TEL

东电电子